Гетероструктуры Ga-=SUB=-x-=/SUB=-In-=SUB=-1-x-=/SUB=-As-=SUB=-y-=/SUB=-Bi-=SUB=-z-=/SUB=-Sb-=SUB=-1-y-z-=/SUB=-/InSb для фотоприемных устройств (λ = 6-12 μm)
نویسندگان
چکیده
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ژورنال
عنوان ژورنال: Письма в журнал технической физики
سال: 2019
ISSN: 0320-0116
DOI: 10.21883/pjtf.2019.16.48152.17863